The asymmetrical field-controlled thyristor
نویسندگان
چکیده
منابع مشابه
Switching Characteristics of an Asymmetrical Complementary 4H-SiC Gate Turn- Off (GTO) Thyristor
This work is partially supported by US Office of Naval Research grant N00014-96-1-0926 Abstract The switching characteristics of 4H-SiC asymmetric GTO thyristors are studied and compared to Si based IGBTs, MCTs, and MOSFETs. Forward current density, turn-off time and forward blocking voltage parameters are matched for the various switching devices. From the measurements, the necessary parameter...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 1980
ISSN: 0018-9383
DOI: 10.1109/t-ed.1980.20018